Investigation of Piezoelectric Properties of Wurtzite AlN Films under In-Plane Strain: A First-Principles Study-Reference-Cited by-同舟云学术

Investigation of Piezoelectric Properties of Wurtzite AlN Films under In-Plane Strain: A First-Principles Study

Published:2024-08-04 Issue:8 Volume:14 Page:984
ISSN:2079-6412
Container-title:Coatings
language:en
Short-container-title:Coatings

Author:

Qin Guoqiang¹²^ORCID,Zhao Ziyuan¹²,Wang Ao¹²,Wang Wentao¹²,Qin Shengjian¹²^ORCID,Wu Hongya¹²,Yang Zhigang¹²,Yu Gang¹²^ORCID,Zhang Guanglei³^ORCID

Affiliation:

1. School of Materials Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

2. Hebei Provincial Engineering Research Center of Metamaterials and Micro-Device, Shijiazhuang 050043, China

3. National Engineering Research Center for Colloidal Materials, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China

Abstract

This research article presents a comprehensive first-principles study on the piezoelectric properties of Wurtzite Aluminum Nitride (AlN) films under in-plane strain conditions. By calculating the piezoelectric tensor coefficients (e33, e31, and e15), we investigate the variation patterns of these constants with respect to in-plane strain. Our results indicate significant changes in the piezoelectric constants within the range of in-plane strain considered, exhibiting a linear trend despite opposite trends for e33 compared to e31 and e15. This study highlights the extreme sensitivity of AlN films’ piezoelectric performance to in-plane strain, suggesting its potential as an effective means for tuning and optimizing the piezoelectric properties of AlN-based devices.

Publisher

MDPI AG

Link

https://www.mdpi.com/2079-6412/14/8/984/pdf

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