Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications

Abstract

The ferroelectric barium–strontium titanate (BST) multi-layer structure has been formed directly on silicon carbide by serial deposition and “in situ” annealing of layers. This approach allowed us to achieve the high-quality perovskite lattice of ferroelectric that provides the best combination of high tunability and low losses for BST/SiC structures at microwaves. Electric characteristics of BST/SiC planar capacitor structures were studied under the high level of microwave power for the first time. The BST/SiC structure consisted of highly oriented ferroelectric film on highly heat-conducting substrate have demonstrated the absence of the overheating of the active area of the capacitor under dissipated power density up to 125 W/mm 2 .