Abstract
This work proposes a novel AlGaN/GaN transient voltage suppression (TVS) diode (B-TVS-D) with bidirectional clamp capability, which consists of a small-size AlGaN/GaN monolithic bidirectional switch, two 2DEG-based current-limiting resistors (R1A/R1C, in parallel connection between the gate electrodes and the neighboring ohmic-contact electrodes (anode/cathode)), and a 2DEG-based proportional amplification resistor (R2, in parallel connection between two gate electrodes). It is demonstrated that the proposed B-TVS-D possesses a symmetrical triggering voltage (Vtrig) and a high secondary breakdown current (Is, over 8 A, corresponding to 12 kV human body model failure voltage) in different directional electrostatic discharge (ESD) events. The proposed diode can effectively enhance the electrostatic discharge robustness for the GaN-based power system. It is also verified that R1A/R1C and R2 have an important impact on Vtrig of the proposed B-TVS-D. Both the decrease in R2 and increase in R1A/R1C can lead to the decrease of Vtrig. In addition, the proposed B-TVS-D can be fabricated on the conventional p-GaN HEMT platform, making the ESD design of the GaN-based power system more convenient.
Funder
National Natural Science Foundation of China
Basic scientific research projects in Guangzhou
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Cited by
4 articles.
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