Optimal Design of Multiple Floating Rings for 3D Large-Area Trench Electrode Silicon Detector

Abstract

The 3D electrode silicon detector eliminates the limit of chip thickness, so it can reduce the electrode spacing (small area) and effectively improve the radiation hardness. In order to expand the application range of the 3D electrode detector, we first propose a 3D large-area silicon detector with a large sensitive volume, and realize multiple floating rings on the upper and lower surfaces of the detector. Due to the influence of different charge states and energy levels in the Si-SiO2 interface system, the top and bottom of the 3D P+ electrode are more prone to avalanche breakdown in the 3D large-area detector before the detector is completely depleted or the carrier saturation drift velocity is reached. Moreover, the electric field distribution becomes very uneven under the influence of the oxide charge, resulting in non-equilibrium carriers that cannot drift in the optimal path parallel to the detector surface. In this paper, the effect of floating rings on the performance of a 3D large-area silicon detector is studied by TCAD simulation. It can increase avalanche breakdown voltage by 14 times in a non-irradiated environment, and can work safely in a moderate irradiated environment. The charge collection efficiency can be effectively improved by optimizing the drift path.