The 3.4 GHz BAW RF Filter Based on Single Crystal AlN Resonator for 5G Application

Abstract

To meet the stringent requirements of 5G communication, we proposed a high-performance bulk acoustic wave (BAW) filter based on single crystal AlN piezoelectric films on a SiC substrate. The fabrication of the BAW filter is compatible with the GaN high electron mobility transistor (HEMT) process, enabling the implementation of the integration of the BAW device and high-performance monolithic microwave integrated circuit (MMIC). The single crystal AlN piezoelectric film with 650-nm thickness was epitaxially grown on the SiC substrate by Metal Organic Chemical Vapor Deposition (MOCVD). After wafer bonding and substrate removal, the single crystal AlN film with electrode layers was transferred to another SiC wafer to form an air gap type BAW. Testing results showed that the fabricated resonators have a maximum Q-factor up to 837 at 3.3 GHz resonant frequency and electromechanical coupling coefficient up to 7.2%. Ladder-type filters were developed to verify the capabilities of the BAW and process, which has a center frequency of 3.38 GHz with 160 MHz 3 dB bandwidth. The filter achieved a minimum 1.5 dB insertion loss and more than 31 dB out-of-band rejection. The high performance of the filters is attributed to the high crystallinity and low defects of epitaxial single crystal AlN films.