Hybrid integration of BAW resonators with an on‐chip inductor to improve the stopband rejection of the N78 band filter

Author:

Jiang Hong1,Xuan Weipeng1,Ding Rui2,Zhang Biao1,He Xingli3,Jin Hao2,Gao Feng4,Dong Shurong2,Luo Jikui12

Affiliation:

1. Ministry of Education Key Laboratory of RF Circuits and Systems, College of Electronics & Information Hangzhou Dianzi University Hangzhou China

2. Key Laboratory of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang, College of Information Science and Electronic Engineering Zhejiang University Hangzhou China

3. School of Electronic and Information Engineering Soochow University Suzhou China

4. ZJU‐Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou China

Abstract

AbstractThis paper demonstrates a 3.4 GHz micro‐acoustic filter with excellent in‐band insertion loss, rectangle coefficient, and out‐of‐band rejection. The proposed filter was based on a novel topology by integrating the bulk acoustic wave (BAW) resonators with an on‐chip clamping inductor, the introduction of the lumped components is beneficial for improving the filters' stopband rejection while having minimal influence on the rectangle coefficient and in‐band insertion loss. Al0.8Sc0.2N material was selected as the piezoelectric film of the BAW device and the inductor was fabricated on the same wafer with BAW devices. The manufactured filter has a minimum in‐band insertion loss of ~ 1.5 dB, a 3 dB bandwidth of about 170 MHz, and a stopband rejection of nearly ‐30 dB. The experimental results verify the design and show great applications for 5G communication and beyond.

Publisher

Wiley

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