Dislocation Analysis of Nanoindentation on Different Crystal Planes of 6H-SiC Based on Molecular Dynamics Simulation

Abstract

In order to explore the deformation law of nanoindentation dislocation on different crystal planes of 6H-SiC by cube indenter at high temperature, the (0001), (11¯00) and (21¯1¯0) crystal planes were simulated by molecular dynamics, and changes of dislocation and shear stress under different crystal planes were analyzed. With the deepening of indentation depth, the formation of dislocations on different indentation surfaces has a certain repeatability. The crystal plane (0001) continuously generates horizontal dislocations around the indentation, (11¯00) the crystal plane generates two square dislocation rings moving downward at a time, and (21¯1¯0) the crystal plane generates one square dislocation ring moving downward at a time.