Introducing Ultra-Low Energy Ion Implantation of Radioactive Isotopes at ISOLDE, CERN for (Near-)Surface Characterization: The ASPIC and ASCII Vacuum Chambers

Abstract

Solid-state physics research has long employed radioactive isotopes to investigate the crystallographic, electric and magnetic properties of nanostructures. Ion implantation (1–100 keV) is the method of choice for incorporating radioactive nuclei into the crystal structure. However, the enormous scientific interest in 2D materials, multiferroics and their interfaces of the last decades has lead to more stringent demands for isotope incorporation. Ultra-low energy (ULE) ion implantation (10–100 eV) provides the ability to precisely tune the depth of the implanted radioactive probes, even in the case of atomically thin 2D materials. To unlock this potential and expand the experimental capabilities of the ISOLDE collaboration in CERN, the apparatus for surface physics and interfaces at CERN (ASPIC), an experienced ultra-high vacuum chamber dedicated to surface characterization and modification, is refurbished and upgraded with a new component: the ASPIC’s ion implantation (ASCII) chamber, designed for ULE ion implantation of radioactive probes. This paper describes the scientific context, design and application of these vacuum chambers.