Enhancement of Light Extraction Efficiency of UVC-LED by SiO2 Antireflective Film

Abstract

In order to achieve high quantum efficiency of AlGaN-based deep ultraviolet light-emitting diodes (UVC-LED), it is important to improve the light extraction efficiency (LEE). In this paper, theoretical simulation and experiment of SiO2 anti-reflective film deposited on UVC-LED were investigated. The effect of different SiO2 thickness on the light extraction efficiency of 275 nm UVC-LED was studied, showing that 140 nm SiO2 anti-reflective film can effectively improve the light output power of UVC-LED by more than 5.5%, which were also confirmed by the TFCALC simulation. The enhancement of UVC-LED light extraction efficiency by this antireflective film is mainly due to the 3λ2 light coherent effect at the SiO2/Al2O3 interface. Our work proved the promising application of antireflective coating on UVC-LED.