Abstract
GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination. The breakdown behavior in terms of the breakdown voltage and the electroluminescence were studied as functions of the anode thickness. A repeatable avalanche breakdown and highest breakdown voltage were measured with the thinnest anode of 300 nm and with the thinnest edge termination region. This indicates the efficacy of the nitrogen-implanted hybrid edge termination design that comprises of junction termination and guard rings hybrid design. As the anode thickness increases, the edge termination thickness increases, and the devices exhibit lower breakdown voltages and less robust breakdown characteristics, often destructive. From this study, we also conclude that a very high p-layer doping of 2 × 1019 cm−3 is not s practical doping level, because it is too sensitive to the edge termination thickness.
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献