Recombination Parameters of the Diffusion Region and Depletion Region for Crystalline Silicon Solar Cells under Different Injection Levels

Abstract

In order to maximize performance in all conditions of use, and to model exactly the performance of solar cells, it is very important to study the recombination parameters under different injection levels. In this paper, the recombination parameters and their effect on the output performance of solar cells are investigated under different injection levels for the full-area aluminum back surface field (Al-BSF) solar cell and passivated emitter and rear cell (PERC) solar cell for the first time. It is found that the recombination parameter J01 of the diffusion region and the recombination parameter J02 of the depletion region for the PERC solar cell are smaller than those of the Al-BSF solar cell under the same injection level. A new finding is that the recombination parameter J01 of Al-BSF solar cells increases quickly with the decreasing injection level compared with PERC solar cells. Finally, the J01/J02 of Al-BSF and PERC solar cells is investigated, and the effects of J01/J02 on the electrical parameters are also analyzed for Al-BSF and PERC solar cells under different injection levels. The obtained conclusions not only clarify the relationship between the recombination parameters and injection levels, but also help to improve cell processes and accurately model daily energy production.