Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling
Author:
Publisher
MDPI AG
Subject
Electrical and Electronic Engineering
Link
http://www.mdpi.com/2079-9268/3/2/54/pdf
Reference21 articles.
1. A Low-Voltage Processor for Sensing Applications With Picowatt Standby Mode
2. A 256-kb 65-nm Sub-threshold SRAM Design for Ultra-Low-Voltage Operation
3. A 250 mV 8 kb 40 nm Ultra-Low Power 9T Supply Feedback SRAM (SF-SRAM)
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