Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors
Author:
Affiliation:
1. Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
2. Department of Electronics Engineering, Korea National University of Transportation, Chungju-si 27469, Republic of Korea
Abstract
Funder
Ministry of Science and ICT
Ministry of Education
Publisher
MDPI AG
Subject
General Materials Science
Link
https://www.mdpi.com/1996-1944/16/4/1687/pdf
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