Highly Sensitive Magnesium-Doped ZnO Nanorod pH Sensors Based on Electrolyte–Insulator–Semiconductor (EIS) Sensors

Abstract

For highly sensitive pH sensing, an electrolyte insulator semiconductor (EIS) device, based on ZnO nanorod-sensing membrane layers doped with magnesium, was proposed. ZnO nanorod samples prepared via a hydrothermal process with different Mg molar ratios (0–5%) were characterized to explore the impact of magnesium content on the structural and optical characteristics and sensing performance by X-ray diffraction analysis (XRD), atomic force microscopy (AFM), and photoluminescence (PL). The results indicated that the ZnO nanorods doped with 3% Mg had a high hydrogen ion sensitivity (83.77 mV/pH), linearity (96.06%), hysteresis (3 mV), and drift (0.218 mV/h) due to the improved crystalline quality and the surface hydroxyl group role of ZnO. In addition, the detection characteristics varied with the doping concentration and were suitable for developing biomedical detection applications with different detection elements.