Photodetection Enhancement via Graphene Oxide Deposition on Poly 3-Methyl Aniline

Author:

Elsayed Asmaa M.12,Alkallas Fatemah H.3ORCID,Ben Gouider Trabelsi Amira3ORCID,AlFaify Salem4,Shkir Mohd45ORCID,Alrebdi Tahani A.3ORCID,Almugren Kholoud S.3ORCID,Kusmatsev Feodor V.6ORCID,Rabia Mohamed17ORCID

Affiliation:

1. Nanophotonics and Applications Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt

2. TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt

3. Department of Physics, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia

4. Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha 61413, Saudi Arabia

5. Department of Chemistry and University Centre for Research & Development, Chandigarh University, Mohali 140413, India

6. Department of Physics, Khalifa University of Science and Technology, Abu Dhabi 127788, United Arab Emirates

7. Nanomaterials Science Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt

Abstract

A graphene oxide (GO)/poly 3-methyl aniline (P3MA) photodetector has been developed for light detection in a broad optical region: UV, Vis, and IR. The 3-methyl aniline was initially synthesized via radical polymerization using an acid medium, i.e., K2S2O8 oxidant. Consequently, the GO/P3MA composite was obtained through the adsorption of GO into the surface of P3MA. The chemical structure and optical properties of the prepared materials have been illustrated via XRD, FTIR, SEM, and TEM analysis. The absorbance measurements demonstrate good optical properties in the UV, Vis, and near-IR regions, although a decrease in the bandgap from 2.4 to 1.6 eV after the composite formation was located. The current density (Jph) varies between 0.29 and 0.68 mA·cm−2 (at 2.0 V) under dark and light, respectively. The photodetector has been tested using on/off chopped light at a low potential, in which the produced Jph values decrease from 0.14 to 0.04 µA·cm−2, respectively. The GO/P3MA photodetector exhibits excellent R (and D) values of 4 and 2.7 mA·W−1 (0.90 × 109 and 0.60 × 109 Jones) in the UV (340 nm) and IR (730 nm) regions, respectively. The R and D values obtained here make the prepared photodetector a promising candidate for future light detection instruments.

Funder

Princess Nourah bint Abdulrahman University

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

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