Funder
U.S. Department of Energy
Minnesota Supercomputing Institute
National Science Foundation
United States Department of Defense | U.S. Army
AFOSR
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference52 articles.
1. Jacobsen, R. S. et al. Strained silicon as a new electro-optic material. Nature 441, 199–202 (2006).
2. Cheng, T.-H. et al. Strain-enhanced photoluminescence from Ge direct transition. Appl. Phys. Lett. 96, 211108 (2010).
3. Feng, J., Qian, X., Huang, C.-W. & Li, J. Strain-engineered artificial atom as a broad-spectrum solar energy funnel. Nat. Photon. 6, 866–872 (2012).
4. Lee, M. L., Fitzgerald, E. A., Bulsara, M. T., Currie, M. T. & Lochtefeld, A. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 97, 11101 (2005).
5. Yun, W. S., Han, S. W., Hong, S. C., Kim, I. G. & Lee, J. D. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX
2 semiconductors (M = Mo, W; X = S, Se, Te). Phys. Rev. B 85, 1–5 (2012).
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