Fabrication of MoS2/C60 Nanolayer Field-Effect Transistor for Ultrasensitive Detection of miRNA-155

Abstract

As a major public health issue, early cancer detection is of great significance. A field-effect transistor (FET) based on an MoS2/C60 composite nanolayer as the channel material enhances device performance by adding a light source, allowing the ultrasensitive detection of cancer-related miRNA. In this work, atomic layer deposition (ALD) was used to deposit MoS2 layer by layer, and C60 was deposited by an evaporation coater to obtain a composite nanolayer with good surface morphology as the channel material of the FET. Based on the good absorption of C60 by blue-violet light, a 405 nm laser was selected to irradiate the channel material, improving the function of FET biosensors. A linear detection window from 10 pM to 1 fM with an ultralow detection limit of 5.16 aM for miRNA-155 was achieved.