Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories
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Published:2023-03-10
Issue:3
Volume:14
Page:630
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Aguilera-Pedregosa Cristina1ORCID, Maldonado David1ORCID, González Mireia B.2, Moreno Enrique3, Jiménez-Molinos Francisco1ORCID, Campabadal Francesca2ORCID, Roldán Juan B.1ORCID
Affiliation:
1. Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain 2. Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Carrer dels Til·lers s/n, Campus UAB, 08193 Bellaterra, Spain 3. Departamento de Física y Matemáticas, Facultad de Ciencias, Universidad de Alcalá, Pl. de San Diego s/n, Alcalá de Henares, 28801 Madrid, Spain
Abstract
A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit experimental data and obtain the maximum and average temperatures of the conductive filaments (CFs) that are responsible for the switching behavior. It is found that the experimental CFs temperature corresponds to the maximum simulated temperatures obtained at the narrowest sections of the CFs. These temperature values can be used to improve compact models for circuit simulation purposes.
Funder
Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía FEDER program Ramón y Cajal
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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