Abstract
Photogeneration of excess charge carriers in semiconductors produces electronic strain. Under transient conditions, electron-hole pairs may be separated across a potential barrier. Using time-resolved X-ray diffraction measurements across an intrinsic AlGaAs/n-doped GaAs interface, we find that the electronic strain is only produced by holes, and that electrons are not directly observable by strain measurements. The presence of photoinduced charge carriers in the n-doped GaAs is indirectly confirmed by delayed heat generation via recombination.
Funder
National Research Foundation of Korea
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
5 articles.
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