Pseudovertical Schottky Diodes on Heteroepitaxially Grown Diamond

Author:

Weippert JürgenORCID,Reinke PhilippORCID,Benkhelifa FouadORCID,Czap HeikoORCID,Giese ChristianORCID,Kirste LutzORCID,Straňák PatrikORCID,Kustermann JanORCID,Engels JanORCID,Lebedev VadimORCID

Abstract

Substrates comprising heteroepitaxially grown single-crystalline diamond epilayers were used to fabricate pseudovertical Schottky diodes. These consisted of Ti/Pt/Au contacts on p− Boron-doped diamond (BDD) layers (1015–1016 cm−3) with varying thicknesses countered by ohmic contacts on underlying p+ layers (1019–1020 cm−3) on the quasi-intrinsic diamond starting substrate. Whereas the forward current exhibited a low-voltage shunt conductance and, for higher voltages, thermionic emission behavior with systematic dependence on the p− film thickness, the reverse leakage current appeared to be space-charge-limited depending on the existence of local channels and thus local defects, and depending less on the thickness. For the Schottky barriers ϕSB, a systematic correlation to the ideality factors n was observed, with an “ideal” n = 1 Schottky barrier of ϕSB = 1.43 eV. For the best diodes, the breakdown field reached 1.5 MV/cm.

Funder

the Wehrtechnische Dienststelle für Informationstechnologie und Elektronik (WTD 81) of the Federal Ministry of Defence

QuaComVor of the Fraunhofer Society

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

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