Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics

Abstract

Nanobridge Josephson junctions and nanometer-scale superconducting quantum interference devices (nanoSQUIDs) based on titanium nitride (TiN) thin films are described. The TiN films have a room temperature resistivity of ~15 µΩ·cm, a superconducting transition temperature Tc of up to 5.3 K and a coherence length ξ(4.2 K) of ~105 nm. They were deposited using pulsed DC magnetron sputtering from a stoichiometric TiN target onto Si (100) substrates that were heated to 800 °C. Electron beam lithography and highly selective reactive ion etching were used to fabricate nanoSQUIDs with 20-nm-wide nanobridge Josephson junctions of variable thickness. X-ray and high-resolution electron microscopy studies were performed. Non-hysteretic I(V) characteristics of the nanobridges and nanoSQUIDs, as well as peak-to-peak modulations of up to 17 µV in the V(B) characteristics of the nanoSQUIDs, were measured at 4.2 K. The technology offers prospects for superconducting electronics based on nanobridge Josephson junctions operating within the framework of the Ginzburg–Landau theory at 4.2 K.