Micro-Nanoarchitectonics of Ga2O3/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection

Abstract

This study presents broadband ultraviolet photodetectors (BUV PDs) based on Ga2O3/GaN core-shell micro-nanorod arrays with excellent performance. Micro-Nanoarchitectonics of Ga2O3/GaN core-shell rod arrays were fabricated with high-temperature oxidization of GaN micro-nanorod arrays. The PD based on the microrod arrays exhibited an ultrahigh responsivity of 2300 A/W for 280 nm at 7 V, the peak responsivity was approximately 400 times larger than those of the PD based on the planar Ga2O3/GaN film. The responsivity was over 1500 A/W for the 270–360 nm band at 7 V. The external quantum efficiency was up to 1.02 × 106% for 280 nm. Moreover, the responsivity was further increased to 2.65 × 104 A/W for 365 nm and over 1.5 × 104 A/W for 270–360 nm using the nanorod arrays. The physical mechanism may have been attributed to the large surface area of the micro-nanorods coupled with the Ga2O3/GaN heterostructure, which excited more photogenerated holes to be blocked at the Ga2O3 surface and Ga2O3/GaN interface, resulting in a larger internal gain. The overall high performance coupled with large-scale production makes it a promising candidate for practical BUV PD.