A Ferroelectric Memristor-Based Transient Chaotic Neural Network for Solving Combinatorial Optimization Problems

Abstract

A transient chaotic neural network (TCNN) is particularly useful for solving combinatorial optimization problems, and its hardware implementation based on memristors has attracted great attention recently. Although previously used filamentary memristors could provide the desired nonlinearity for implementing the annealing function of a TCNN, the controllability of filamentary switching still remains relatively poor, thus limiting the performance of a memristor-based TCNN. Here, we propose to use ferroelectric memristor to implement the annealing function of a TCNN. In the ferroelectric memristor, the conductance can be tuned by switching the lattice non-centrosymmetry-induced polarization, which is a nonlinear switching mechanism with high controllability. We first establish a ferroelectric memristor model based on a ferroelectric tunnel junction (FTJ), which exhibits the polarization-modulated tunnel conductance and the nucleation-limited-switching (NLS) behavior. Then, the conductance of the ferroelectric memristor is used as the self-feedback connection weight that can be dynamically adjusted. Based on this, a ferroelectric memristor-based transient chaotic neural network (FM-TCNN) is further constructed and applied to solve the traveling salesman problem (TSP). In 1000 runs for 10-city TSP, the FM-TCNN achieves a shorter average path distance, a 32.8% faster convergence speed, and a 2.44% higher global optimal rate than the TCNN.