Optimal I–V Curve Scan Time for a GaAs Laser Power Converter

Author:

Zhang Yihao12ORCID,Guan Chenggang13,Chu Wenxiu12,Zhou Yikai12,Zhou Ruling12,Yao Yucheng12

Affiliation:

1. Laboratory of Optoelectronics and Sensor (OES Lab), School of Science, Hubei University of Technology, Wuhan 430068, China

2. Hubei Engineering Technology Research Center of Energy Photoelectric Device and System, Hubei University of Technology, Wuhan 430068, China

3. AOV Energy LLC, Wuhan 430068, China

Abstract

Current–voltage (I–V) curve measurement is an essential performance characterization technique for laser power converters (LPCs). Choosing an appropriate scan time can effectively avoid problems in the test process that lead to inaccurate data. We analyzed the I–V curve error of a GaAs LPC in relation to scan time by building a test system for LPCs. A method for determining the optimal scan time, defined as a time period containing the upper limit and lower limit, is presented. The effects of the temperature of a measured GaAs LPC were investigated through comparative tests, and the upper limit of the scanning time was determined. The hysteresis of the equivalent capacitance in GaAs LPCs was analyzed. The upward limit of the scanning time was determined by establishing the relationship between the hysteresis of the I–V curve and the scanning time. It was concluded that the optimal scanning time of GaAs LPCs in the same structure ranges from 10 ms to 1 s.

Funder

International Science and Technology Cooperation Key Research and Development Program of Science and Technology Agency in Hubei Province

Project of Outstanding Young and Middle-aged Scientific Innovation Team of Colleges and Universities in Hubei Province

Overseas Expertise Introduction Center for Discipline Innovation

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

Reference21 articles.

1. Wojtczuk, S.J. (October, January 29). Long-wavelength laser power converters for optical fibers. Proceedings of the 26th IEEE Photovoltaic Specialists, Anaheim, CA, USA.

2. Energy band adjustment of 808 nm GaAs laser power converters via gradient doping;Zhao;J. Semicond.,2021

3. Fafard, S. (2022). High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm Photonics. Photonics, 9.

4. Enhanced efficiency in 808 nm GaAs laser power converters via gradient doping;Zhao;AIP Adv.,2009

5. GaAs converters for high power densities of laser illumination;Oliva;Prog. Photovolt.,2008

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