Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches-Reference-Cited by-同舟云学术

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Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches

Published:2016-10-29 Issue:4 Volume:3 Page:54
ISSN:2304-6732
Container-title:Photonics
language:en
Short-container-title:Photonics

Author:

Knežević Tihomir,Nanver Lis,Suligoj Tomislav

Funder

Hrvatska Zaklada za Znanost

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

Link

http://www.mdpi.com/2304-6732/3/4/54/pdf

Reference45 articles.

1. Semiconductor drift chamber — An application of a novel charge transport scheme

2. Silicon drift chambers — first results and optimum processing of signals

3. Review of semiconductor drift detectors

4. Silicon drift detector – the key to new experiments

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases;ECS Journal of Solid State Science and Technology;2021-06-01

2. Deposition and etching behaviour of boron trichloride gas at silicon surface;Journal of Crystal Growth;2020-01

3. Characterization and modeling of thermally-induced doping contaminants in high-purity germanium;Journal of Physics D: Applied Physics;2018-11-12

4. Nanometer-Thin Pure Boron Layers as Mask for Silicon Micromachining;Journal of Microelectromechanical Systems;2017-12

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