Deposition and etching behaviour of boron trichloride gas at silicon surface-Reference-Cited by-同舟云学术

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Deposition and etching behaviour of boron trichloride gas at silicon surface

Published:2020-01 Issue: Volume:529 Page:125301
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Muroi Mitsuko,Yamada Ayami,Saito Ayumi,Habuka Hitoshi^ORCID

Funder

MEXT KAKENHI

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Semiconductor Devices;Sze,2002

2. Chemistry of the Elements;Greenwood,1997

3. Semiconductor Silicon Crystal Technology;Shimura,1989

4. Silicon Epitaxy;Crippa,2001

5. Model of boron incorporation into silicon epitaxial film in a B2H6-SiHCl3-H2 system;Habuka;J. Crystal Growth,2000

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Competitive adsorption mechanism of SiHCl3 with BCl3 under a hydrogen atmosphere: Boron impurities introduction into polysilicon;Materials Today Communications;2024-06

2. Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor;Advances in Chemical Engineering and Science;2023

3. Boron Doping in Next-Generation Materials for Semiconductor Device;Characteristics and Applications of Boron;2022-10-26

4. Boron-carbon-silicon film chemical vapor deposition by boron trichloride, dichlorosilane and monomethylsilane gases;Surface and Coatings Technology;2022-10

5. Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases;ECS Journal of Solid State Science and Technology;2021-06-01

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