Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors
Author:
Funder
National Natural Science Foundation of China
Guangdong Natural Science Foundation
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2079-4991/8/5/293/pdf
Reference21 articles.
1. Recent progress in transparent oxide semiconductors: Materials and device application
2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
4. Transparent Amorphous Oxide Semiconductor TFTs History and current status;Hosono,2012
5. High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer
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