Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg2Si/Si Heterojunction

Abstract

In this investigation, p–Mg2Si/n–Si heterojunction photodetector (PD) is fabricated by magnetron sputtering and low vacuum annealing in the absence of argon or nitrogen atmosphere. Multilayer Graphene (MLG)/Mg2Si/Si heterojunction PD is first fabricated by transferring MLG to Mg2Si/Si heterojunction substrate using the suspended self-help transfer MLG method. After characterizing the phase composition, morphology and detection properties of Mg2Si/Si and MLG/Mg2Si/Si heterojunction PDs, the successful fabrication of the Mg2Si/Si and MLG/Mg2Si/Si heterojunction PDs are confirmed and some detection capabilities are realized. Compared with the Mg2Si/Si heterojunction PD, the light absorption and the ability to effectively separate and transfer photogenerated carriers of MLG/Mg2Si/Si heterojunction PD are improved. The responsivity, external quantum efficiency (EQE), noise equivalent power (NEP), detectivity (D*), on/off ratio and other detection properties are enhanced. The peak responsivity and EQE of the MLG/Mg2Si/Si heterojunction PD are 23.7 mA/W and 2.75%, respectively, which are better than the previous 1–10 mA/W and 2.3%. The results illustrate that the fabrication technology of introducing MLG to regulate the detection properties of the Mg2Si/Si heterojunction PD is feasible. In addition, this study reveals the potential of MLG to enhance the detection properties of optoelectronic devices, broadens the application prospect of the Mg2Si/Si-based heterojunction PDs and provides a direction for the regulation of optoelectronic devices.