Author:
Li Xin,Wu Yue,Yuan Jialei,Ni Shuyu,Qin Chuan,Jiang Yan,Li Jie,Wang Yongjin
Abstract
A light signal transmitter based on ultraviolet radiation is realized on GaN-on-silicon platform. The light signal transmitter with ultra-small active area is fabricated by a double-etching process. The absolute value of negative junction capacitance of transmitter is as low as the pF (picofarads) scale in positive bias voltage. Small capacitance is beneficial to improve the communication performance of a transmitter. The dominant EL (electroluminescence) peak of transmitter is located at about 380 nm in the ultraviolet range. With the increase of the current, the dominant peak of transmitter remains stable and the light output power is lineally modulated. A free-space data transmission test in the ultraviolet range with 250 Mbps was conducted to indicate a promising high-speed optical communication capability of a light signal transmitter in the ultraviolet range.
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Natural Science Foundation of the Jiangsu Higher Education Institutions
Natural Science Foundation of Jiangsu Province
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
4 articles.
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