Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications
Author:
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2079-4991/8/6/368/pdf
Reference22 articles.
1. Overview of Probe-based Storage Technologies
2. Nanoscale Electrolytic Switching in Phase-Change Chalcogenide Films
3. Nanoscale Bipolar Electrical Switching of Ge2 Sb2 Te5 Phase-Change Material Thin Films
4. Phase Change Memory
5. Electrical probe storage using Joule heating in phase change media
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1. Investigation of the Crystallization Characteristics of Intermediate States in Ge2Sb2Te5 Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation;Nanomaterials;2022-02-04
2. Design of Phase‐Change Memory Using Apertureless Scanning Near‐Field Optical Microscopy in the Near‐Infrared Region;physica status solidi (RRL) – Rapid Research Letters;2020-12-21
3. Scanning near-field optical microscopy based phase-change optical memory;Applied Physics Express;2019-08-23
4. Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation;Nanomaterials;2019-05-01
5. Reading Contrast of Phase-Change Electrical Probe Memory in Multiple Bit Array;IEEE Transactions on Nanotechnology;2019
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