Fabrication of Sn@Al2O3 Core-shell Nanoparticles for Stable Nonvolatile Memory Applications

Abstract

Sn@Al2O3 core-shell nanoparticles (NPs) with narrow spatial distributions were synthesized in silicon dioxide (SiO2). These Sn@Al2O3 core-shell NPs were self-assembled by thermally annealing a stacked structure of SiOx/Al/Sn/Al/SiOx sandwiched between two SiO2 layers at low temperatures. The resultant structure provided a well-defined Sn NP floating gate with a SiO2/Al2O3 dielectric stacked tunneling barrier. Capacitance-voltage (C-V) measurements on a metal-oxide-semiconductor (MOS) capacitor with a Sn@Al2O3 core-shell NP floating gate confirmed an ultra-high charge storage stability, and the multiple trapping of electron at the NPs, as expected from low-k/high-k dielectric stacked tunneling layers and metallic NPs, respectively.