A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules

Author:

Chowdhury Dibyendu1ORCID,De Bishnu Prasad2,Appasani Bhargav2ORCID,Singh Navaneet Kumar34ORCID,Kar Rajib4,Mandal Durbadal4,Bizon Nicu567ORCID,Thounthong Phatiphat89ORCID

Affiliation:

1. Department of ECE, Haldia Institute of Technology, Haldia 721657, India

2. School of Electronics Engineering, KIIT University, Bhubaneswar 751024, India

3. University College of Engineering and Technology (UCET), Vinoba Bhave University (VBU), Hazaribag 825301, India

4. Department of ECE, NIT Durgapur, Durgapur 713209, India

5. Faculty of Electronics, Communication and Computers, University of Pitesti, 110040 Pitesti, Romania

6. Doctoral School, University Politehnica of Bucharest, 060042 Bucharest, Romania

7. ICSI Energy, National Research and Development Institute for Cryogenic and Isotopic Technologies, 240050 Ramnicu Valcea, Romania

8. Renewable Energy Research Centre (RERC), Department of Teacher Training in Electrical Engineering, Faculty of Technical Education, King Mongkut’s University of Technology North Bangkok, Bangkok 10800, Thailand

9. Group of Research in Electrical Engineering of Nancy (GREEN), University of Lorraine-GREEN, 54000 Nancy, France

Abstract

In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity. The sensitivity of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET-based biosensors have also been evaluated. The sensitivity (ΔVth) improved in JL-DM-GSDG MOSFET/JL-DM-DG-MOSFET-based biosensors for neutral/charged biomolecules is 116.66%/66.66% and 1165.78%/978.94%, respectively, compared with the previously reported results. The electrical detection of biomolecules is validated using the ATLAS device simulator. The noise and analog/RF parameters are compared between both biosensors. A lower threshold voltage is observed in the GSDG-MOSFET-based biosensor. The Ion/Ioff ratio is higher for DG-MOSFET-based biosensors. The proposed GSDG-MOSFET-based biosensor demonstrates higher sensitivity than the DG-MOSFET-based biosensor. The GSDG-MOSFET-based biosensor is suitable for low-power, high-speed, and high sensitivity applications.

Funder

University of Pitesti

King Mongkut’s University of Technology North Bangkok

International Research Partnership “Electrical Engineering-Thai French Research Center (EE-TFRC)”

Université de Lorraine

National Research Council of Thailand

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3