Ion Beam Assisted Deposition of Thin Epitaxial GaN Films
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/10/7/690/pdf
Reference20 articles.
1. III-Nitride Semiconductors: Electrical, Structural and Defect Properties;Manasreh,2000
2. High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures
3. Low-energy ion/surface interactions during film growth from the vapor phase;Greene,1989
4. Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)
5. Substrates for gallium nitride epitaxy
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1. Cascade mechanism and mechanical property of the dislocation loop formation in GaN twin crystal-induced crystallization;Materials Science in Semiconductor Processing;2022-05
2. Ion Beam-Assisted Deposition;Low-Energy Ion Irradiation of Materials;2022
3. Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy;Nanotechnology;2019-12-24
4. Influence of nitrogen ion species on mass-selected low energy ion-assisted growth of epitaxial GaN thin films;Applied Surface Science;2019-12
5. Can we always control the thickness layer in the MBE method with atomic precision? Analysis of the problem on the MQWs GaN/AlN example;Japanese Journal of Applied Physics;2019-04-08
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