Ion Beam Assisted Deposition of Thin Epitaxial GaN Films
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/10/7/690/pdf
Reference20 articles.
1. III-Nitride Semiconductors: Electrical, Structural and Defect Properties;Manasreh,2000
2. High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures
3. Low-energy ion/surface interactions during film growth from the vapor phase;Greene,1989
4. Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)
5. Substrates for gallium nitride epitaxy
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