A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/7/8/5761/pdf
Reference17 articles.
1. Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs
2. Amorphous IZO-based transparent thin film transistors
3. Amorphous oxide channel TFTs
4. Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing
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2. High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al2O3/HfO2 Dielectrics;Chinese Physics Letters;2022-10-01
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4. Effects of Parasitic Source/Drain Field Plates on Performances of Channel-Passivated Amorphous InGaZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2018-11
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