Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods

Abstract

In this study, a bottom-gated ZnO thin film transistor (TFT) pressure sensor with nanorods (NRs) is suggested. The NRs are formed on a planar channel of the TFT by hydrothermal synthesis for the mediators of pressure amplification. The fabricated devices show enhanced sensitivity by 16~20 times better than that of the thin film structure because NRs have a small pressure transmission area and causes more strain in the underlayered piezoelectric channel material. When making a sensor with a three-terminal structure, the leakage current in stand-by mode and optimal conductance state for pressure sensor is expected to be controlled by the gate voltage. A scanning electron microscope (SEM) was used to identify the nanorods grown by hydrothermal synthesis. X-ray diffraction (XRD) was used to compare ZnO crystallinity according to device structure and process conditions. To investigate the effect of NRs, channel mobility is also extracted experimentally and the lateral flow of current density is analyzed with simulation (COMSOL) showing that when the piezopotential due to polarization is formed vertically in the channel, the effective mobility is degraded.