Performance of Nanostructures within InGaN-Based Multiquantum-Well Light-Emitting Devices-Reference-Cited by-同舟云学术

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Performance of Nanostructures within InGaN-Based Multiquantum-Well Light-Emitting Devices

Published:2017-04-11 Issue:4 Volume:7 Page:380
ISSN:2076-3417
Container-title:Applied Sciences
language:en
Short-container-title:Applied Sciences

Author:

Wu Ya-Fen,Lee Jiunn-Chyi

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Link

http://www.mdpi.com/2076-3417/7/4/380/pdf

Reference34 articles.

1. The Blue Laser Diode;Nakamura,1997

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop

4. Tunnel injection In0.25Ga0.75N/GaN quantum dot light-emitting diodes

5. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

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