Affiliation:
1. Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China
Abstract
Surface α-particle emissivity testing and spectral characterization of two leaded tin spheres (Sn10%Pb90%, Sn63%Pb37%) and one lead-free tin sphere (Sn96.5%Ag3.0%Cu0.5%, SAC305) were carried out. The results show that Sn10%Pb90% Sn spheres have the highest α-particle emissivity; Sn63%Pb37% Sn spheres are the next highest, which is an order of magnitude lower than the α-particle emissivity of Sn10%Pb90% Sn spheres; and SAC305 Sn spheres have the lowest emissivity, which is reduced by about 55.6% compared to the emissivity of Sn63%Pb37% Sn spheres. All three types of tin spheres, after purification treatment, achieved the grade of ultra-low alpha particle emissivity (<0.002 α/(cm2·h)). The internal radionuclide traceability of the tin sphere, combined with the energy spectrum, reveals that the emission spectrum of the tin sphere exhibits an obvious “single peak” characteristic, with the peak energy in the interval of 5 MeV~5.5 MeV. Comparative analyses revealed that 210Po is the main nuclide that produces alpha particles, and 210Po originates from the decay of 210Pb. Further Monte Carlo simulations show that α-particles with energies greater than 4.1 MeV in the measured energy spectrum all come from the contribution of radionuclides within 5 μm of the surface layer of the tin sphere, which accounts for 60% of the total radioactivity. Combining the experimental and simulation results, it is found that the internal radionuclides of the tin sphere are characterized by more surface layer and less internal layer. The above results are of great significance for the establishment of α-particle mitigation methods for tin spheres.
Funder
National Natural Science Foundation of China
Key-Area Research and Development Program of Guangdong Province
Reference26 articles.
1. Alpha-particle-induced soft errors in dynamic memories;May;IEEE Trans. Electron. Dev.,1979
2. Anlin, H.E., Guo, G., and Shen, D. (2017). Proton Induced Single Event Upsets Test and Soft Error Rate Prediction of nm Device. Annu. Rep. China Inst. At. Energy, 93–94.
3. Study of alpha particle soft error mechanism in nanoscale static random access memory;Zhang;Acta Phys. Sinica,2020
4. Bhuva, B. (2018, January 1–5). Soft error trends in advanced silicon technology nodes. Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.
5. Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool;Lei;Chin. Phys. B,2018