Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration
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Published:2023-08-05
Issue:15
Volume:16
Page:5483
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ISSN:1996-1944
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Container-title:Materials
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language:en
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Short-container-title:Materials
Author:
Huang Weiye1, Wu Junyi2, Li Wenxin1, Chen Guojin1, Chu Changyong1ORCID, Li Chao1, Zhu Yucheng1, Yang Hui1, Chao Yan1
Affiliation:
1. School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China 2. Sanmen Sanyou Technology Inc., Taizhou 472000, China
Abstract
In this work, we design a micro-vibration platform, which combined with the traditional metal-assisted chemical etching (MaCE) to etch silicon nanowires (SiNWs). The etching mechanism of SiNWs, including in the mass-transport (MT) and charge-transport (CT) processes, was explored through the characterization of SiNW’s length as a function of MaCE combined with micro-vibration conditions, such as vibration amplitude and frequency. The scanning electron microscope (SEM) experimental results indicated that the etching rate would be continuously improved with an increase in amplitude and reached its maximum at 4 μm. Further increasing amplitude reduced the etching rate and affected the morphology of the SiNWs. Adjusting the vibration frequency would result in a maximum etching rate at a frequency of 20 Hz, and increasing the frequency will not help to improve the etching effects.
Funder
Zhejiang Science and Technology Plan Project Fundamental Research Funds for the Provincial University of Zhejiang
Subject
General Materials Science
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