Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Author:

Xia XiaoyuORCID,Guo Zhiyou,Sun Huiqing

Abstract

In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new charge balance method provided by HEMTs and micro-FPs, the physical mechanism of FP adjusting the HEMT potential distribution and channel electric field distribution is analyzed. The new FP structure consists of a drain field plate (D-FP), a source field plate (S-FP) and several micro-gate field plates (G-FP) to improve the output characteristics of HEMTs. By adjusting the distribution of potential and channel electric field, a wider and more uniform channel electric field can be obtained, and the breakdown voltage can be increased to 1278 V. Although the on-resistance of the HEMT is slightly increased to 5.24 Ω mm, it is still lower than other reference values. These results may open up a new and effective method for manufacturing high-power devices for power electronics applications.

Funder

Key-Area Research and Development Programof Guangdong Province

Foshan Science and Technology Bureau

Guangzhou Science and Technology Program Key Projects

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

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