Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging

Abstract

High-performance composites with a resin matrix are urgently required for electronic packaging due to their low dielectric constant, outstanding high temperature resistance, excellent corrosion resistance, light weight and easy molding. In this work, hollow-glass-microsphere (HGM)-filled fluorinated-phthalonitrile (PBDP) composites, with filler contents ranging from 0 to 35.0 vol.%, were prepared in order to modify the dielectric properties of the phthalonitrile. Scanning electron microscopy (SEM) observations indicate that the modified HGM particles were uniformly dispersed in the matrix. The PBDP/27.5HGM-NH2 composite demonstrates a low dielectric constant of 1.85 at 12 GHz. The 5% thermogravimetric temperature (T5) of composites with silanized HGM filler (481–486 °C) is higher than the minimum packaging-material requirements (450 °C). In addition, the heat-resistance index (THRI) of PBDP/HGM-NH2 composites reached as high as 268 °C. the storage modulus of PBDP/HGM-NH2 composites were significantly increased to 1283 MPa at 400 °C, an increase by 50%, in comparison to that of PBDP phthalonitrile resin (857 MPa). The excellent dielectric and thermal properties of the present composites may pave a way for comprehensive applications in electronic packaging and thermal management for energy systems.