Affiliation:
1. Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China
2. The School of Physics and Electronic Information Engineering, Qinghai Normal University, Xining 810016, China
Abstract
Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years. In this paper, a new type of heterostructure junctionless tunnel FET biosensor with an embedded nanogap is proposed, in which the control gate consists of two parts, namely the tunnel gate and auxiliary gate, with different work functions; and the detection sensitivity of different biomolecules can be controlled and adjusted by the two gates. Further, a polar gate is introduced above the source region, and a P+ source is formed by the charge plasma concept by selecting appropriate work functions for the polar gate. The variation of sensitivity with different control gate and polar gate work functions is explored. Neutral and charged biomolecules are considered to simulate device-level gate effects, and the influence of different dielectric constants on sensitivity is also researched. The simulation results show that the switch ratio of the proposed biosensor can reach 109, the maximum current sensitivity is 6.91 × 102, and the maximum sensitivity of the average subthreshold swing (SS) is 0.62.
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Cited by
1 articles.
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