Contact Resistance Parallel Model for Edge-Contacted 2D Material Back-Gate FET

Abstract

Because 2D materials have adjust band gap, high mobility ratio, bipolar, anisotropy and flexibility characters, they have become the new direction for FET’s channel materials. According to the characteristics of the layers of 2D materials, the current transport characteristics can be improved by using the edge-contacted electrode. Moreover, the research on the current transfer mechanism between channel layers is the basis of the practical application of 2D transistors. In the research, the 2D material-MoS2 is used as the channel material, the back-gate transistors with different layers are prepared by dry etching and edge-contacted electrode structure. We also discuss the current transport mechanism of channel and established the channel resistance parallel transport model. The parallel model and TLM are used to analyze the contact resistance of the edge-contacted structure, and the total resistance, total contact resistance, and single-layer contact resistance of different layers are calculated. The parallel model is verified by dc test data. The number of channel layers is closely related to contact resistance, total resistance, and mobility. In addition, the of single MoS2 is about 7.27 kΩ·um. This contact resistance parallel model can also be applied to other 2D materials edge-contacted FET.