Abstract
Single event effect (SEE) and space electrostatic discharge (SESD) are two important types of effects causing spacecraft anomalies. However, it is difficult to differentiate them to identify the root cause of on-orbit anomalies. This paper pioneers the comparative study of the “soft errors” induced by the SEE and SESD with a well-known static random-access memory (SRAM). The similarity and difference of the physical mechanisms between the “soft errors” induced by SEE and SESD are studied with the technology computer-aided design (TCAD) simulations. Meanwhile, the characteristics of the “soft errors” and the relation with external stimulus between SEE and SESD are further investigated with the pulsed laser SEE facility and SESD test system. The results showed that the similar appearances of “soft errors” can be generated by both SEE and SESD, while multiple-bit upset (MBU) has been observed only in SESD testing. In addition, in comparison to the random distribution of SEE sensitivity areas, the SESD sensitivity areas are in closer proximity to the power supply regions. The different symptoms in upsets can be used to identify the root causes of the spacecraft anomalies.
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Cited by
2 articles.
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