A 5–50 GHz SiGe BiCMOS Linear Transimpedance Amplifier with 68 dBΩ Differential Gain towards Highly Integrated Quasi-Coherent Receivers

Abstract

Quasi-coherent optical receivers have recently emerged targeting access networks, offering improved sensitivity and reach over direct-detection schemes at the expense of a higher receiver bandwidth. Higher levels of system integration together with sufficiently wideband front-end blocks, and in particular high-speed linear transimpedance amplifiers (TIAs), are currently demanded to reduce cost and scale up receiver data rates. In this article, we report on the design and testing of a linear TIA enabling high-speed quasi-coherent receivers. A shunt-feedback loaded common-base topology is adopted, with gain control provided by a subsequent Gilbert cell stage. The circuit was fabricated in a commercial 130 nm SiGe BiCMOS technology and has a bandpass characteristic with a 3 dB bandwidth in the range of 5–50 GHz. A differential transimpedance gain of 68 dBΩ was measured, with 896 mVpp of maximum differential output swing at the 1 dB compression point. System experiments in a quasi-coherent receiver demonstrate an optical receiver sensitivity of −30.5 dBm (BER = 1 × 10−3) at 10 Gbps, and −26 dBm (BER = 1 × 10−3) at 25 Gbps. The proposed TIA represents an enabling component towards highly integrated quasi-coherent receivers.