A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors-Reference-Cited by-同舟云学术

A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

Published:2014-09-30 Issue:4 Volume:3 Page:582-593
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Galloway Kenneth

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

http://www.mdpi.com/2079-9292/3/4/582/pdf

Reference30 articles.

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2. Optimized trench MOSFET technologies for power devices

3. Trench Gate Power MOSFET: Recent Advances and Innovations;Saxena,2012

4. Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs;Kuboyama;IEEE Trans. Nucl. Sci.,2010

5. Analysis of Commercial Trench Power MOSFETs' Responses to ${\rm Co}^{60}$ Irradiation

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