A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference-Reference-Cited by-同舟云学术

A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference

Published:2024-04-15 Issue:8 Volume:13 Page:1499
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Jia Shichao¹,Ye Tianchun²,Xiao Shimao²

Affiliation:

1. School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China

2. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

Abstract

This paper presents a bandgap reference (BGR) with high-order temperature-segmented compensation. The compensation signal is generated using the voltage difference between two bipolar junction transistor (BJT) emitter bases, each of which individually loads a proportional-to-absolute temperature (PTAT) current and a zero-to-absolute temperature (ZTAT) current. The proposed BGR achieves a low-temperature coefficient (TC) over a wide temperature range. Simulations using the 0.18 μm Bipolar-CMOS-DMOS process show a typical TC of 2.25 ppm/°C from −40 °C to 125 °C. With an active area of 0.07986 mm2, it consumes 36 μW power under an operating voltage of 1 V. The integrated output noise from 0.1 Hz to 10 Hz is 81.1 μV.

Publisher

MDPI AG

Link

https://www.mdpi.com/2079-9292/13/8/1499/pdf

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