Categorization and SEU Fault Simulations of Radiation-Hardened-by-Design Flip-Flops

Abstract

In the previous three decades, many Radiation-Hardened-by-Design (RHBD) Flip-Flops (FFs) have been designed and improved to be immune to Single Event Upsets (SEUs). Their specifications are enhanced regarding soft error tolerance, area overhead, power consumption, and delay. In this review, previously presented RHBD FFs are classified into three categories with an overview of each category. Six well-known RHBD FFs architectures are simulated using a 180 nm CMOS process to show a fair comparison between them while the conventional Transmission Gate Flip-Flop (TGFF) is used as a reference design for this comparison. The results of the comparison are analyzed to give some important highlights about each design.