Simulation Analysis in Sub-0.1 μm for Partial Isolation Field-Effect Transistors

Abstract

In this paper, we extensively analyzed the drain-induced barrier lowering (DIBL) and leakage current characteristics of the proposed partial isolation field-effect transistor (PiFET) structure. We then compared the PiFET with the conventional planar metal-oxide semiconductor field-effect transistor (MOSFET) and silicon on insulator (SOI) structures, even though they have the same doping profile. Two major features of the PiFET are potential condensation and potential modulation by a buried insulator. The potential modulation near the drain region can control the electric field in the overlapped region of the drain and gate, because it causes a high gate-fringing field. Therefore, we suggest guidelines with respect to the optimal PiFET structure.