A 3.4–3.6 GHz High-Selectivity Filter Chip Based on Film Bulk Acoustic Resonator Technology-Reference-Cited by-同舟云学术

A 3.4–3.6 GHz High-Selectivity Filter Chip Based on Film Bulk Acoustic Resonator Technology

Published:2023-02-20 Issue:4 Volume:12 Page:1056
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Yang Qinghua¹,Xu Yao²,Wu Yongle²^ORCID,Wang Weimin¹,Lai Zhiguo³

Affiliation:

1. School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China

2. School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, China

3. Design Department, HunterSun Electronics Company Ltd., Suzhou 215000, China

Abstract

The development of mobile 5G technology poses new challenges for high-frequency and high-performance filters. However, current commercial acoustic wave filters mainly focus on 4G LTE, which operates below 3 GHz. It is necessary to accelerate research on high-frequency acoustic wave filters. A high-selectivity film bulk acoustic resonator (FBAR) filter chip for the 3.4–3.6 GHz range was designed and fabricated in this paper. The design procedure includes FBAR parameter fitting, filter schematic analysis, and the generation principle of transmission zeros (TZs). The measured results show that the filter chip is of high roll-off and stopband suppression. Most of the stopband suppression is better than 35 dB. Finally, error analysis was conducted, and FBAR parameters were modified after testing for future filter design work.

Funder

National Natural Science Foundations of China

Fundamental Research Funds for the Central Universities

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

https://www.mdpi.com/2079-9292/12/4/1056/pdf

Reference22 articles.

1. A 0.1–1 GHz low power RF receiver front-end with noise cancellation technique for WSN applications;Li;AEU—Int. J. Electron. Commun.,2018

2. A Lowpass Filter Design Using Curved and Fountain Shaped Resonators;Roshani;Frequenz,2019

3. Design of a low pass filter using rhombus-shaped resonators with an analytical LC equivalent circuit;Hookari;Turk. J. Electr. Eng. Comput. Sci.,2020

4. Single and Multiband Acoustic-Wave-Lumped-Element-Resonator (AWLR) Bandpass Filters with Reconfigurable Transfer Function;Psychogiou;IEEE Trans. Microw. Theory Tech.,2016

5. Design of On-Chip Dual-Band Bandpass Filter Using Lumped Elements in LTCC Technology;Hao;IEEE Trans. Circuits Syst. II Express Briefs,2022

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