A ±0.15 °C (3σ) Inaccuracy CMOS Smart Temperature Sensor from −40 °C to 125 °C with a 10 ms Conversion Time-Leveraging an Adaptative Decimation Filter in 65 nm CMOS Technology
Author:
Affiliation:
1. INESC-ID, 1000-029 Lisbon, Portugal
2. Instituto Superior Técnico, Universidade de Lisboa, 1000-029 Lisbon, Portugal
3. Silicon Gate, 1000-029 Lisbon, Portugal
Abstract
Funder
GreenChips-EDU project
FCT/MCTES
Publisher
MDPI AG
Link
https://www.mdpi.com/2079-9292/13/14/2823/pdf
Reference23 articles.
1. Pertijs, M.A.P., and Huijsing, J.H. (2006). Precision Temperature Sensors in CMOS Technology, Springer Science.
2. A CMOS smart temperature sensor with a 3σ inaccuracy of ±0.1 °C from −55 °C to 125 °C;Pertijs;IEEE J. Solid-State Circuits,2005
3. Baker, R.J. (2002). CMOS Mixed Signal Circuit Design, John Wiley & Sons.
4. Toth, N.G., Tang, Z., Someya, T., Pan, S., and Makinwa, K.A.A. (2023, January 19–23). 23.7 A BJT-Based Temperature Sensor with ±0.1 °C (3σ) Inaccuracy from −55 °C to 125 °C and a 0.85 pJ.K2 Resolution FoM Using Continuous-Time Readout. Proceedings of the 2023 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, USA.
5. Ali, I., Asif, M., Shehzad, K., Rehman, M.R.U., Kim, D.G., Rikan, B.S., Pu, Y., Yoo, S.S., and Lee, K.-Y. (2020). A Highly Accurate, Polynomial-Based Digital Temperature Compensation for Piezoresistive Pressure Sensor in 180 nm CMOS Technology. Sensors, 20.
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